Study of thermal effects and self-heating phenomena in planar power SOI MOS transistors

被引：0
|
作者：
Yu. A. Chaplygin
E. A. Artamonova
A. Yu. Krasyukov
T. Yu. Krupkina
机构：
[1] State Institute of Electronic Engineering,
来源：
Semiconductors | 2008年 / 42卷
关键词：
85.30.De; 85.30.Tv; 84.30.Jc;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Heat removal problems, thermal effects, and self-heating phenomena occurring during operation of planar power SOI MOS transistors are considered. Using device-technological simulating methods, the transistor characteristics and safe operation range were studied. It was shown that limitations of the safe operation range are mostly associated with structure self-heating rather than with the parasitic bipolar transistor.
引用
收藏
页码：1522 / 1526
页数：4
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