A novel non-volatile memory storage system for I/O-intensive applications

被引:0
|
作者
Wen-Bing Han
Xiao-Gang Chen
Shun-Fen Li
Ge-Zi Li
Zhi-Tang Song
Da-Gang Li
Shi-Yan Chen
机构
[1] Chinese Academy of Sciences,Shanghai Institute of Micro
[2] University of Chinese Academy of Sciences,system and Information Technology
[3] Peking University,School of Electronics and Computer Engineering
关键词
In-storage processing; File system; Non-volatile memory (NVM); Storage system; I/O-intensive applications; TP333;
D O I
暂无
中图分类号
学科分类号
摘要
The emerging memory technologies, such as phase change memory (PCM), provide chances for highperformance storage of I/O-intensive applications. However, traditional software stack and hardware architecture need to be optimized to enhance I/O efficiency. In addition, narrowing the distance between computation and storage reduces the number of I/O requests and has become a popular research direction. This paper presents a novel PCMbased storage system. It consists of the in-storage processing enabled file system (ISPFS) and the configurable parallel computation fabric in storage, which is called an in-storage processing (ISP) engine. On one hand, ISPFS takes full advantage of non-volatile memory (NVM)’s characteristics, and reduces software overhead and data copies to provide low-latency high-performance random access. On the other hand, ISPFS passes ISP instructions through a command file and invokes the ISP engine to deal with I/O-intensive tasks. Extensive experiments are performed on the prototype system. The results indicate that ISPFS achieves 2 to 10 times throughput compared to EXT4. Our ISP solution also reduces the number of I/O requests by 97% and is 19 times more efficient than software implementation for I/O-intensive applications.
引用
收藏
页码:1291 / 1302
页数:11
相关论文
共 50 条
  • [41] Ferroelectric Random Access Memory as a Non-Volatile Cache Solution in a Multimedia Storage System
    Jung, Dong Jin
    Kim, Kinam
    MATERIALS AND DEVICES FOR SMART SYSTEMS III, 2009, 1129 : 3 - +
  • [43] MEGABIT BUBBLE MEMORY FOR NON-VOLATILE STORAGE .4.
    SIEGEL, P
    ELECTRONIC ENGINEERING, 1980, 52 (634): : 51 - &
  • [44] Performance Impact of New Interface for Non-volatile Memory Storage
    Oikawa, Shuichi
    SOFTWARE ENGINEERING RESEARCH, MANAGEMENT AND APPLICATIONS, 2015, 578 : 1 - 13
  • [45] ZnO/FLC nanocomposites with low driving voltage and non-volatile memory for information storage applications
    Chaudhary, A.
    Shukla, R. K.
    Malik, P.
    Mehra, R.
    Raina, K. K.
    CURRENT APPLIED PHYSICS, 2019, 19 (12) : 1374 - 1378
  • [46] Restructuring I/O-intensive computations for locality
    Kandemir, M
    Choudhary, A
    Ramanujam, J
    HIGH-PERFORMANCE COMPUTING AND NETWORKING, PROCEEDINGS, 1999, 1593 : 1097 - 1106
  • [47] NEW TUNING SYSTEM WITH NON-VOLATILE ANALOG MEMORY
    TSUKAMOTO, K
    HAMADA, M
    YAMADA, M
    SASAMI, T
    KUTSUYAMA, H
    RAI, Y
    IEEE TRANSACTIONS ON CONSUMER ELECTRONICS, 1980, 26 (01) : 20 - 27
  • [48] Developments of non-volatile memory
    Panov, Ivan V.
    Kalinin, Sergey V.
    EDM 2006: 7TH ANNUAL INTERNATIONAL WORKSHOP AND TUTORIALS ON ELECTRON DEVICES AND MATERIALS, PROCEEDINGS, 2006, : 15 - 17
  • [49] Non-volatile memory challenge
    Dax, Mark
    Semiconductor International, 1997, 20 (10): : 84 - 86
  • [50] Nanostructured materials for non-volatile organic transistor memory applications
    Shih, C. -C.
    Lee, W. -Y.
    Chen, W. -C.
    MATERIALS HORIZONS, 2016, 3 (04) : 294 - 308