Negative differential resistance in high-power InGaN/GaN laser diode

被引：1
|
作者：
Shamirzaev V.T. [1 ]
Gaisler V.A. [1 ,2 ]
Shamirzaev T.S. [2 ,3 ]
机构：
[1] Novosibirsk State Technical University, pr. Karla Marksa 20, Novosibirsk
[2] Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk
[3] Ural Federal University, ul. Mira 19, Ekaterinburg
来源：
Optoelectronics, Instrumentation and Data Processing | 2016年 / 52卷 / 05期
关键词：
laser diode; negative differential resistance;
D O I：
10.3103/S8756699016050058
中图分类号：
学科分类号：
摘要：
Negative differential resistance in InGaN/GaN ultraviolet laser diodes is demonstrated. Switching between the lower and upper branches of the S-shaped current-voltage characteristic leads to a change in the optical emission power by six orders of magnitude as the current increases from 3 to 15 mA. The occurrence of a negative differential resistance is explained by superlinear injection of charge carriers of the same sign into the high-resistance InGaN quantum well. © 2016, Allerton Press, Inc.
引用
下载
收藏
页码：442 / 446
页数：4
相关论文
共 50 条
  • [1] Analysis of efficiency limitations in high-power InGaN/GaN laser diodes
    Joachim Piprek
    Optical and Quantum Electronics, 2016, 48
  • [2] Analysis of efficiency limitations in high-power InGaN/GaN laser diodes
    Piprek, Joachim
    OPTICAL AND QUANTUM ELECTRONICS, 2016, 48 (10)
  • [3] Physics of high-power InGaN/GaN lasers
    Piprek, J
    Nakamura, S
    IEE PROCEEDINGS-OPTOELECTRONICS, 2002, 149 (04): : 145 - 151
  • [4] High-power operation of a wide-striped InGaN laser diode array
    Samonji, Katsuya
    Yoshida, Shinji
    Hagino, Hiroyuki
    Yamanaka, Kazuhiko
    Takigawa, Shinichi
    NOVEL IN-PLANE SEMICONDUCTOR LASERS XI, 2012, 8277
  • [5] High-power GaN diode lasers and their applications
    Kawaguchi, Masao
    Nozaki, Shinichiro
    Morimoto, Kiyoshi
    Takigawa, Shinichi
    Katayama, Takuma
    Tanaka, Tsuyoshi
    PROCEEDINGS OF THE 2017 IEEE HIGH POWER DIODE LASERS AND SYSTEMS CONFERENCE (HPD), 2017, : 43 - 44
  • [6] High-power blue-violet laser diode fabricated on a GaN substrate
    Shono, M
    Nomura, Y
    Bessho, Y
    NOVEL IN-PLANE SEMICONDUCTOR LASERS III, 2004, 5365 : 282 - 287
  • [7] Hardening with high-power diode laser
    Pawłowicz, W., 1600, Taylor and Francis Ltd. (28):
  • [8] Theory of the GaN crystal diode: Negative mass negative differential resistance
    Ridley, BK
    Schaff, WJ
    Eastman, LF
    JOURNAL OF APPLIED PHYSICS, 2005, 97 (09)
  • [9] Enhanced Heat Dissipation of High-Power InGaN Blue Laser Diode Through Diamond Substrates
    Ding, Yongjie
    Li, Jiayu
    Hao, Ziliang
    Wang, Qing
    Zhang, Hongjin
    Peng, Yang
    Chen, Mingxiang
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2024, 36 (16) : 1005 - 1008
  • [10] What Limits the Efficiency of High-Power InGaN/GaN Lasers?
    Piprek J.
    IEEE Journal of Quantum Electronics, 2017, 53 (02)
12345