High-power GaN diode lasers and their applications

被引：0

作者：

Kawaguchi, Masao ^{[1
]}

Nozaki, Shinichiro ^{[1
]}

Morimoto, Kiyoshi ^{[1
]}

Takigawa, Shinichi ^{[1
]}

Katayama, Takuma ^{[1
]}

Tanaka, Tsuyoshi ^{[1
]}

机构：

[1] Panasonic Corp, Div Engn, Sensing Solut Dev Ctr, Automot & Ind Syst Co, 1 Kotari Yakemachi, Nagaokakyo, Kyoto 6178520, Japan

来源：

PROCEEDINGS OF THE 2017 IEEE HIGH POWER DIODE LASERS AND SYSTEMS CONFERENCE (HPD) | 2017年

关键词：

Gallium Nitride; diode lasers; white light; spot light illuminator;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-power over 7W is presented in a single-emitting GaN diode laser with optical-loss suppressed waveguide structure. Here, thick undoped optical waveguide eliminates undesired light leakage to the absorbing p-cladding layer and thus leads the device to a high slope efficiency operation. The diode laser pumped white spotlight illuminator achieves a luminous efficiency 51.3 lm/W at a flux of 861 lm.

引用

页码：43 / 44

页数：2

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