High-power GaN diode lasers and their applications

被引：0
|
作者：
Kawaguchi, Masao [1 ]
Nozaki, Shinichiro [1 ]
Morimoto, Kiyoshi [1 ]
Takigawa, Shinichi [1 ]
Katayama, Takuma [1 ]
Tanaka, Tsuyoshi [1 ]
机构：
[1] Panasonic Corp, Div Engn, Sensing Solut Dev Ctr, Automot & Ind Syst Co, 1 Kotari Yakemachi, Nagaokakyo, Kyoto 6178520, Japan
来源：
PROCEEDINGS OF THE 2017 IEEE HIGH POWER DIODE LASERS AND SYSTEMS CONFERENCE (HPD) | 2017年
关键词：
Gallium Nitride; diode lasers; white light; spot light illuminator;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-power over 7W is presented in a single-emitting GaN diode laser with optical-loss suppressed waveguide structure. Here, thick undoped optical waveguide eliminates undesired light leakage to the absorbing p-cladding layer and thus leads the device to a high slope efficiency operation. The diode laser pumped white spotlight illuminator achieves a luminous efficiency 51.3 lm/W at a flux of 861 lm.
引用
收藏
页码：43 / 44
页数：2
相关论文
共 50 条
12345