Design and Analysis of DGDMJL TFET for Biosensing Applications

This paper presents a new design of charge plasma junctionless tunnel field effect transistor (CP JLTFET) with improved ON current, surface potentials. For the ease of fabrication, source and drain regions are induced in intrinsic silicon material using proper metal workfunctions. The rate of tunneling of electrons is found more in case of proposed CP JLTFET. This increased the ON state performance of device i.e. ON drive current, potential and electric field. We have simulated and analysed the proposed with different dielectric values like K = 1, K = 6 for the detection of biological molecules. In our analysis, the proposed device have shown pronounced electrical parameters like drain current, surface potential for various materials like SiO2, HfO2 and TiO2. Higher dielectric constants result in better drain current values which leads to an increase in the sensitivity of the device. The increase in tunneling of electrons is mainly due to high recombination of carriers in the channel region. The proposed device simulated their electrical parameters like drain current, surface potentials, electric field, and energy bands with different materials and also sensing capabilities. These excellent performance parameters of the proposed device with an appropriate material can be used for sensing application of biomolecules by introducing a cavity in the device. We have observed that the charge carriers recombination rate increases for the proposed device and this impact and improvements in drain current, surface potential, electric field and energy bands. By introducing the nanocavity with length of 7 nm for the proposed device under gate overlap region, the improvement in performance parameters, and It provides better drain current sensitivity that shows the proposed device is more suitable for biosensing applications.