Raman spectroscopic investigation and thermoelectric studies of defect-induced Mg-doped delafossite thin film

Here, we modified the band structure of P-type Mg-doped CuCrO2 thin films by defect-induced lattice compressive strain. A significant increase in p-type conductivity of 33.44 S cm−1 and enhanced power factor of 679.44 μW m−1 K−2 at 200 °C were observed for the film of thickness 211 nm. The increased strain from XRD calculations and phonon vibrations mode features of the grown film from Raman spectroscopic investigations, giving an insight to the thermal phonon mode lead to thermoelectric features of the material. Hall effect measurements substantiate the results.