AIBA as Free Radical Initiator for Abrasive-Free Polishing of Hard Disk Substrate

被引:0
|
作者
Hong Lei
Xiaoyan Ren
机构
[1] Shanghai University,Research Center of Nano
来源
关键词
Abrasive-free polishing; hard disk substrate; material removal rate; initiator; AIBA;
D O I
暂无
中图分类号
学科分类号
摘要
In order to optimize the existing slurry for abrasive-free polishing (AFP) of a hard disk substrate, a water-soluble free radical initiator, 2,2′-azobis (2-methylpropionamidine) dihydrochloride (AIBA) was introduced into H2O2-based slurry in the present work. Polishing experiment results with AIBA in the H2O2 slurry indicate that the material removal rate (MRR) increases and the polished surface has a lower surface roughness. The mechanism of AIBA in AFP was investigated using electron spin-resonance spectroscopy and UV–Visible analysis, which showed that the concentration of hydroxyl radical (a stronger oxidizer than H2O2) in the slurry was enhanced in the present of AIBA. The structure of the film formed on the substrate surface was investigated by scanning electron microscopy, auger electron spectroscopy and electrochemical impedance spectroscopy technology, showing that a looser and porous oxide film was found on the hard disk substrate surface when treated with the H2O2-AIBA slurry. Furthermore, potentiodynamic polarization tests show that the H2O2-AIBA slurry has a higher corrosion current density, implying that a fast dissolution reaction can occur on the substrate surface. Therefore, we can conclude that the stronger oxidation ability, loose oxide film on the substrate surface, and the higher corrosion-wear rate of the H2O2-AIBA slurry lead to the higher MRR.
引用
收藏
页码:1245 / 1252
页数:7
相关论文
共 50 条
  • [41] Abrasive-Free Polishing of Single-Crystal 4H-SiC with Silica Glass Plates
    Kubota, Akihisa
    Hatasako, Yuta
    Takita, Takahiro
    Touge, Mutsumi
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2015, 4 (12) : P468 - P475
  • [42] Tooth wear and cleaning effect of an abrasive-free dentifrice
    Ahn, Jae-Hyun
    Kim, Ji-Hye
    Ha, Won-Ho
    Park, Yong-Duk
    JOURNAL OF DENTAL SCIENCES, 2018, 13 (01) : 13 - 19
  • [43] Wear phenomena in abrasive-free copper CMP process
    Balakumar, S
    Haque, T
    Kumar, AS
    Rahman, M
    Kumar, R
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2005, 152 (11) : G867 - G874
  • [44] Characteristics of abrasive-free micelle slurry for copper CMP
    Matsuda, T
    Takahashi, H
    Tsurugaya, M
    Miyazaki, K
    Doy, TK
    Kinoshita, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2003, 150 (09) : G532 - G536
  • [45] FREE ABRASIVE METHOD OF DIAMOND POLISHING
    不详
    CUTTING TOOL ENGINEERING, 1971, 23 (06): : 18 - &
  • [46] Free radical initiator basics
    Athey Jr., Robert D.
    European Coatings Journal, 1998, (03): : 146 - 149
  • [47] Novel abrasive-free planarization of Si and SiC using catalyst
    Hara, Hideyuki
    Sano, Yasuhisa
    Mimura, Hidekazu
    Arima, Kenta
    Kubota, Akihisa
    Yagi, Keita
    Murata, Junji
    Yamauchi, Kazuto
    TOWARDS SYNTHESIS OF MICRO - /NANO - SYSTEMS, 2007, (05): : 267 - +
  • [48] Electrodeposition, assisted by abrasive polishing, of crack-free hard chromium with compressive stress
    Zhu, Zengwei
    Wang, Shuzhen
    Qu, Ningsong
    Zhu, Di
    PHILOSOPHICAL MAGAZINE LETTERS, 2016, 96 (06) : 205 - 211
  • [49] Single crystal silicon wafer polishing by pretreating pad adsorbing SiO2 grains and abrasive-free slurries
    Bu, Zhengzheng
    Niu, Fengli
    Chen, Jiapeng
    Jiang, Zhenlin
    Wang, Wenjun
    Wang, Xuehan
    Wang, Hanqiang
    Zhang, Zefang
    Zhu, Yongwei
    Sun, Tao
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2022, 141
  • [50] A material removal rate model for copper abrasive-free CMP
    Haque, T
    Balakumar, S
    Kumar, AS
    Rahman, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2005, 152 (06) : G417 - G422