Broken-Symmetry Quantum Hall States in Twisted Bilayer Graphene

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作者
Youngwook Kim
Jaesung Park
Intek Song
Jong Mok Ok
Younjung Jo
Kenji Watanabe
Takashi Taniquchi
Hee Cheul Choi
Dong Su Lee
Suyong Jung
Jun Sung Kim
机构
[1] Pohang University of Science and Technology,Department of Physics
[2] Korea Research Institute of Standards and Science,Department of Chemistry
[3] Center for Artificial Low Dimensional Electronic System,Department of Physics
[4] Institute for Basic Science (IBS),undefined
[5] Pohang University of Science and Technology,undefined
[6] Kyungpook National University,undefined
[7] National Institute for Materials Science,undefined
[8] Applied Quantum Composites Research Center,undefined
[9] KIST Jeonbuk Institute of Advanced Composite Materials,undefined
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摘要
Twisted bilayer graphene offers a unique bilayer two-dimensional-electron system where the layer separation is only in sub-nanometer scale. Unlike Bernal-stacked bilayer, the layer degree of freedom is disentangled from spin and valley, providing eight-fold degeneracy in the low energy states. We have investigated broken-symmetry quantum Hall (QH) states and their transitions due to the interplay of the relative strength of valley, spin and layer polarizations in twisted bilayer graphene. The energy gaps of the broken-symmetry QH states show an electron-hole asymmetric behaviour, and their dependence on the induced displacement field are opposite between even and odd filling factor states. These results strongly suggest that the QH states with broken valley and spin symmetries for individual layer become hybridized via interlayer tunnelling, and the hierarchy of the QH states is sensitive to both magnetic field and displacement field due to charge imbalance between layers.
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