Effect of top distributed Bragg reflectors on the performance of 650 nm AlGaInP resonant cavity light-emitting diodes

被引：1

作者：

Yang Z. ^{[1
]}

Li J.-J. ^{[1
]}

Kang Y.-Z. ^{[1
]}

Deng J. ^{[1
]}

Han J. ^{[1
]}

Zou D.-S. ^{[1
]}

Shen G.-D. ^{[1
]}

机构：

[1] Beijing Optoelectronic Technology Laboratory, Beijing University of Technology

来源：

Optoelectronics Letters | 2010年 / 6卷 / 1期

关键词：

Metal Organic Chemical Vapor Deposition; Light Power; Reflective Mirror; Distribute Bragg Reflector; Driving Current;

D O I：

10.1007/s11801-010-9133-4

中图分类号：

学科分类号：

摘要：

Three kinds of 650 nm AlGaInP resonant cavity light-emitting diodes (RCLEDs) are fabricated by metal organic chemical vapor deposition (MOCVD) with different numbers of pairs of top distributed Bragg reflectors (DBRs), which are 15, 10 and 5, respectively. By comparing the full width at half maximum (FWHM), light power and the angular far-field emission of the devices, the device with 15 pairs of top DBRs shows the best performance. Its FWHM is 13.4 nm and the light power is 0.63 mW at a driving current of 30 mA. © 2010 Tianjin University of Technology and Springer-Verlag Berlin Heidelberg.

引用

页码：21 / 23

页数：2

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