Development of NTD-Ge Cryogenic Sensors in LUMINEU

被引:0
|
作者
Xavier-Francois Navick
Cyril Bachelet
David Bouville
Noel Coron
Laurent Devoyon
Andrea Giuliani
David Gray
Serge Hervé
Vincent Humbert
Mathieu Lemaitre
Martin Loidl
Pierre de Marcillac
Claudia Nones
Yves Pénichot
Thierry Redon
Alexis René
Matias Rodrigues
机构
[1] CEA,
[2] DSM/IRFU,undefined
[3] CSNSM,undefined
[4] CNRS & Univ. Orsay,undefined
[5] IEF,undefined
[6] CNRS & Univ. Orsay,undefined
[7] IAS,undefined
[8] CNRS & Univ. Orsay,undefined
[9] CEA,undefined
[10] DEN/DANS/Orphée,undefined
[11] CEA,undefined
[12] DRT/LIST/LNHB,undefined
来源
关键词
Thermal sensor; Cryogenics; Dark Matter; Double beta decay;
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学科分类号
摘要
One of the goals of LUMINEU is to develop NTD-Ge sensors for various applications. The steps are to produce NTD-Ge sensors first, then to study the dependence of their performance on the production parameters, and finally to optimize their electric contacts. In this paper, we present the different possibilities for estimating and measuring the real neutron fluence received by each Ge wafer irradiated in a thermal neutron reactor. Measurements of their resistivity at 300 K indicate a fluence discrepancy from the expected value and confirm the homogeneity of the doping throughout the volume. In addition, we present a method allowing an improved estimation of the impedance below 30 mK just by measuring the ratio of the NTDs’ resistivity at 77 and 4 K.
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页码:292 / 298
页数:6
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