Ballistic transport in single-layer MoS2 piezotronic transistors

被引：0
|
作者：
Xin Huang
Wei Liu
Aihua Zhang
Yan Zhang
Zhonglin Wang
机构：
[1] Chinese Academy of Sciences,Beijing Institute of Nanoenergy and Nanosystems
[2] Lanzhou University,Institute of Theoretical Physics, and Key Laboratory for Magnetism and Magnetic Materials of MOE
[3] School of Material Science and Engineering,undefined
来源：
Nano Research | 2016年 / 9卷
关键词：
piezotronic transistor; two-dimensional (2D) MoS; ballistic transport; numerical calculation;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Because of the coupling between semiconducting and piezoelectric properties in wurtzite materials, strain-induced piezo-charges can tune the charge transport across the interface or junction, which is referred to as the piezotronic effect. For devices whose dimension is much smaller than the mean free path of carriers (such as a single atomic layer of MoS2), ballistic transport occurs. In this study, transport in the monolayer MoS2 piezotronic transistor is studied by presenting analytical solutions for two-dimensional (2D) MoS2. Furthermore, a numerical simulation for guiding future 2D piezotronic nanodevice design is presented.
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页码：282 / 290
页数：8
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