Dynamics of the BiTeI lattice at high pressures

被引:0
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作者
Yu. S. Ponosov
T. V. Kuznetsova
O. E. Tereshchenko
K. A. Kokh
E. V. Chulkov
机构
[1] Russian Academy of Sciences,Institute of Metal Physics, Ural Branch
[2] Russian Academy of Sciences,Rzhanov Institute of Semiconductor Physics, Siberian Branch
[3] Novosibirsk State University,Sobolev Institute of Geology and Mineralogy, Siberian Branch
[4] Tomsk State University,Donostia International Physics Center
[5] Russian Academy of Sciences,Departamento de Fisica de Materailes UPV/EHU, Facultad de Ciencias Quimicas
[6] 20018 San Sebastian/Donostia,Centro de Fisica de Materailes CFM
[7] UPV/EHU,MPC
[8] Centro Mixto CSIC-UPV/EHU,undefined
来源
JETP Letters | 2014年 / 98卷
关键词
JETP Letter; Phonon Spectrum; Basque Country; Topological Insulator; High Pressure Phase;
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摘要
Raman measurements of the phonon spectrum of BiTeI at pressures of up to 20 GPa have been performed. A decrease in the linewidth of E2 vibration by almost a factor of 2 with an increase in the pressure to 3 GPa has been detected. The frequencies of all four Raman active modes increase monotonically with the pressure. These lines are observed in spectra up to ∼8 GPa. Sharp change in the spectrum occurs at pressures of 8–9 GPa, indicating a transition to the high-pressure phase, which holds up to 20 GPa. This transition is reversible and hardly has any hysteresis. A sample in the high-pressure phase is single crystal.
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页码:557 / 561
页数:4
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