Exciton fine structure in twisted transition metal dichalcogenide heterostructures

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作者
Sudipta Kundu
Tomer Amit
H. R. Krishnamurthy
Manish Jain
Sivan Refaely-Abramson
机构
[1] Indian Institute of Science,Centre for Condensed Matter Theory, Department of Physics
[2] Weizmann Institute of Science,Department of Molecular Chemistry and Materials Science
[3] Stanford University,Department of Materials Science and Engineering
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摘要
Moiré superlattices of transition metal dichalcogenide (TMD) heterostructures give rise to rich excitonic phenomena associated with the interlayer twist angle. Theoretical calculations of excitons in such systems are typically based on model moiré potentials that mitigate the computational cost. However, predictive understanding of the electron-hole coupling dominating the excitations is crucial to realize the twist-induced modifications of the optical selection rules. In this work, we use many-body perturbation theory to evaluate the relation between twist angle and exciton properties in TMD heterostructures. We present an approach for unfolding excitonic states from the moiré Brillouin zone onto the separate-layer ones. Applying this method to a large-angle twisted MoS2/MoSe2 bilayer, we find that the optical spectrum is dominated by mixed electron–hole transitions with different momenta in the separate monolayers, leading to unexpected hybridization between interlayer and intralayer excitons. Our findings offer a design pathway for exciton layer-localization in TMD heterostructures.
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