Electrical properties of n-ZnO/p-CuO heterostructures

被引：0
|
作者：
B. M. Vermenichev
O. L. Lisitskiĭ
M. E. Kumekov
S. E. Kumekov
E. I. Terukov
S. Zh. Tokmoldin
机构：
[1] Kazakhstan National Technical University,Ioffe Physicotechnical Institute
[2] Russian Academy of Sciences,undefined
来源：
Semiconductors | 2007年 / 41卷
关键词：
73.40.Lq;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The n-ZnO/p-CuO heterostructure is prepared, and its I-V characteristic is measured. It is shown that the heterostructure conductivity is primarily determined by the CuO layer and the n-ZnO/p-CuO heterojunction itself.
引用
收藏
页码：288 / 290
页数：2
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