Role of the carrier gas flow rate in monolayer MoS2 growth by modified chemical vapor deposition

被引：0
|
作者：
Hengchang Liu
Yuanhu Zhu
Qinglong Meng
Xiaowei Lu
Shuang Kong
Zhiwei Huang
Peng Jiang
Xinhe Bao
机构：
[1] Chinese Academy of Sciences,Shanghai Advanced Research Institute
[2] Chinese Academy of Sciences,State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics
[3] University of Chinese Academy of Sciences,undefined
[4] ShanghaiTech University,undefined
来源：
Nano Research | 2017年 / 10卷
关键词：
MoS; monolayer; carrier gas flow rate; modified CVD;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Monolayer molybdenum disulfide (MoS2) has attracted much attention because of the variety of potential applications. However, its controlled growth is still a great challenge. Here, we report a modified chemical vapor deposition method to grow monolayer MoS2. We observed that the quality of the MoS2 crystals could be greatly improved by tuning the carrier gas flow rate during the heating stage. This subtle modification prevents the uncontrollable reaction between the precursors, a critical factor for the growth of high-quality monolayer MoS2. Based on an optimized gas flow rate, the MoS2 coverage and flake size can be controlled by adjusting the growth time.
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页码：643 / 651
页数：8
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