Role of the carrier gas flow rate in monolayer MoS2 growth by modified chemical vapor deposition

被引：45

作者：

Liu, Hengchang ^{[1
,2
,3
,4
]}

Zhu, Yuanhu ^{[2
]}

Meng, Qinglong ^{[2
]}

Lu, Xiaowei ^{[2
]}

Kong, Shuang ^{[2
]}

Huang, Zhiwei ^{[2
]}

Jiang, Peng ^{[2
]}

Bao, Xinhe ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Shanghai Adv Res Inst, 99 Hi Tech Pk, Shanghai 200120, Peoples R China

[2] Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Catalysis, 457 Zhongshan Rd, Dalian 116023, Peoples R China

[3] Univ Chinese Acad Sci, Beijing 100039, Peoples R China

[4] ShanghaiTech Univ, 100 Haike Rd, Shanghai 201210, Peoples R China

来源：

NANO RESEARCH | 2017年 / 10卷 / 02期

基金：

中国国家自然科学基金;

关键词：

MoS2; monolayer; carrier gas flow rate; modified CVD; MONO LAYER MOS2; HIGH-QUALITY MONOLAYER; LARGE-AREA; ATOMIC LAYERS; MOLYBDENUM-DISULFIDE; SINGLE-CRYSTALLINE; OPTICAL-PROPERTIES; PHASE GROWTH; THIN-LAYERS; AU FOILS;

D O I：

10.1007/s12274-016-1323-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Monolayer molybdenum disulfide (MoS2) has attracted much attention because of the variety of potential applications. However, its controlled growth is still a great challenge. Here, we report a modified chemical vapor deposition method to grow monolayer MoS2. We observed that the quality of the MoS2 crystals could be greatly improved by tuning the carrier gas flow rate during the heating stage. This subtle modification prevents the uncontrollable reaction between the precursors, a critical factor for the growth of high-quality monolayer MoS2. Based on an optimized gas flow rate, the MoS2 coverage and flake size can be controlled by adjusting the growth time.

引用

页码：643 / 651

页数：9

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