The influence of high-temperature annealing on SiC schottky diode characteristics

被引：0
|
作者：
Q. Zhang
T. S. Sudarshan
机构：
[1] University of South Carolina,Department of Electrical Engineering
来源：
Journal of Electronic Materials | 2001年 / 30卷
关键词：
Annealing; SiC; Schottky diodes; barrier inhomogeneities;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The influence of high temperature (up to 800C) annealing on the current-voltage characteristics of n-type 6H-SiC Schottky diodes is presented. Our experimental results indicate that high-temperature annealing can result in the improvement of the forw ard and reverse electrical characteristics of SiC Schottky diodes by repairing any leaky low barrier secondary diode parallel to the primary diode that may be present due to the barrier inhomogeneities at the Schottky contact interface.
引用
收藏
页码：1466 / 1470
页数：4
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