Graphene and two-dimensional materials for silicon technology

被引:0
|
作者
Deji Akinwande
Cedric Huyghebaert
Ching-Hua Wang
Martha I. Serna
Stijn Goossens
Lain-Jong Li
H.-S. Philip Wong
Frank H. L. Koppens
机构
[1] The University of Texas at Austin,Microelectronics Research Center, Department of Electrical and Computer Engineering
[2] IMEC,Department of Electrical Engineering
[3] Stanford University,ICFO–Institut de Ciencies Fotoniques
[4] The Barcelona Institute of Science and Technology,undefined
[5] Castelldefels (Barcelona),undefined
[6] Corporate Research,undefined
[7] Taiwan Semiconductor Manufacturing Company (TSMC),undefined
[8] ICREA–Institució Catalana de Recerça i Estudis Avancats,undefined
来源
Nature | 2019年 / 573卷
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摘要
The development of silicon semiconductor technology has produced breakthroughs in electronics—from the microprocessor in the late 1960s to early 1970s, to automation, computers and smartphones—by downscaling the physical size of devices and wires to the nanometre regime. Now, graphene and related two-dimensional (2D) materials offer prospects of unprecedented advances in device performance at the atomic limit, and a synergistic combination of 2D materials with silicon chips promises a heterogeneous platform to deliver massively enhanced potential based on silicon technology. Integration is achieved via three-dimensional monolithic construction of multifunctional high-rise 2D silicon chips, enabling enhanced performance by exploiting the vertical direction and the functional diversification of the silicon platform for applications in opto-electronics and sensing. Here we review the opportunities, progress and challenges of integrating atomically thin materials with silicon-based nanosystems, and also consider the prospects for computational and non-computational applications.
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页码:507 / 518
页数:11
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