Polycrystalline graphene and other two-dimensional materials

被引:10
|
作者
Yazyev, Oleg V. [1 ]
Chen, Yong P. [2 ,3 ,4 ]
机构
[1] Ecole Polytech Fed Lausanne, Inst Theoret Phys, CH-1015 Lausanne, Switzerland
[2] Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA
[3] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
[4] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
基金
美国国家科学基金会;
关键词
SINGLE-CRYSTAL GRAPHENE; VAPOR-DEPOSITION GROWTH; FEW-LAYER GRAPHENE; GRAIN-BOUNDARIES; ATOMIC-STRUCTURE; ELECTRONIC-PROPERTIES; ELECTRICAL-TRANSPORT; TOPOLOGICAL DEFECTS; EPITAXIAL GRAPHENE; INTRINSIC STRENGTH;
D O I
10.1038/NNANO.2014.166
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Graphene, a single atomic layer of graphitic carbon, has attracted intense attention because of its extraordinary properties that make it a suitable material for a wide range of technological applications. Large-area graphene films, which are necessary for industrial applications, are typically polycrystalline - that is, composed of single-crystalline grains of varying orientation joined by grain boundaries. Here, we present a review of the large body of research reported in the past few years on polycrystalline graphene. We discuss its growth and formation, the microscopic structure of grain boundaries and their relations to other types of topological defect such as dislocations. The Review further covers electronic transport, optical and mechanical properties pertaining to the characterizations of grain boundaries, and applications of polycrystalline graphene. We also discuss research, still in its infancy, performed on other two-dimensional materials such as transition metal dichalcogenides, and offer perspectives for future directions of research.
引用
收藏
页码:755 / 767
页数:13
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