Synthesis and characterization of band gap-reduced ZnO:N and ZnO:(Al,N) films for photoelectrochemical water splitting

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作者
Sudhakar Shet
Kwang-Soon Ahn
Todd Deutsch
Heli Wang
Nuggehalli Ravindra
Yanfa Yan
John Turner
Mowafak Al-Jassim
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[1] National Renewable Energy Laboratory,
[2] New Jersey Institute of Technology,undefined
[3] Energy & Environment Laboratory,undefined
[4] Samsung Advanced Institute of Technology,undefined
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摘要
ZnO thin films with significantly reduced band gaps were synthesized by doping N and codoping Al and N at 100 °C. All the films were synthesized by radiofrequency magnetron sputtering on F-doped tin-oxide-coated glass. We found that codoped ZnO:(Al,N) thin films exhibited significantly enhanced crystallinity compared with ZnO doped solely with N, ZnO:N, at the same growth conditions. Furthermore, annealed ZnO:(Al,N) thin films exhibited enhanced N incorporation over ZnO:N films. As a result, ZnO:(Al,N) films exhibited better photocurrents than ZnO:N films grown with pure N doping, suggesting that charge-compensated donor–acceptor codoping could be a potential method for band gap reduction of wide-band gap oxide materials to improve their photoelectrochemical performance.
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页码:69 / 75
页数:6
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