Carrier concentration dependence of band gap shift in n -type ZnO:Al films

被引：0
|
作者：
Lu, J.G. [1 ,3 ]
Fujita, S. [1 ]
Kawaharamura, T. [2 ]
Nishinaka, H. [2 ]
Kamada, Y. [2 ]
Ohshima, T. [2 ]
Ye, Z.Z. [3 ]
Zeng, Y.J. [3 ]
Zhang, Y.Z. [3 ]
Zhu, L.P. [3 ]
He, H.P. [3 ]
Zhao, B.H. [3 ]
机构：
[1] International Innovation Center, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8520, Japan
[2] Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8510, Japan
[3] State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China
来源：
Journal of Applied Physics | 2007年 / 101卷 / 08期
关键词：
Thin films;
D O I：
暂无
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学科分类号：
摘要：
Conference article (CA)
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