Effect of Oxygen Pressure on Thermoelectric Properties of p-Type CuAlO2 Films Fabricated by Pulsed Laser Deposition

被引：0
|
作者：
Shrikant Saini
Paolo Mele
Shunsuke Osugi
Malik I. Adam
机构：
[1] Muroran Institute of Technology,Research Center for Environmentally Friendly Materials Engineering
[2] Shibaura Institute of Technology,SIT Research Laboratories
[3] Muroran Institute of Technology,Division of Production Systems Engineering
[4] University of Malaya,Department of Mechanical Engineering
来源：
Journal of Materials Engineering and Performance | 2018年 / 27卷
关键词：
CuAlO; heat harvesting; oxides; pulsed laser deposition; thermoelectrics; thin films;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We focus on the growth of p-type CuAlO2 thin films and its thermoelectric properties. Thin films are deposited by pulsed laser deposition technique on single-crystal sapphire substrates varying the oxygen partial pressure. Thin film deposited at oxygen partial pressure of 200 mTorr presents bigger grains (about 10 μm in size) and shows Seebeck coefficient as high as 270 µV/K with a conductivity of about 0.8 S/cm so that its power factor is about 5.7 µW/mK2 at 800 K, twice than observed in the film deposited at 60 mTorr of oxygen.
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页码：6286 / 6290
页数：4
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