ATM-dependent activation of the gene encoding MAP kinase phosphatase 5 by radiomimetic DNA damage

被引:0
|
作者
Anat Bar-Shira
Sharon Rashi-Elkeles
Liat Zlochover
Lilach Moyal
Nechama I Smorodinsky
Rony Seger
Yosef Shiloh
机构
[1] The David and Inez Myers Laboratory for Genetic Research,Department of Human Genetics and Molecular Medicine
[2] Sackler School of Medicine,Department of Biological Regulation
[3] Tel Aviv University,undefined
[4] Hybridoma Unit,undefined
[5] The George S Wise Faculty of Life Sciences,undefined
[6] Tel Aviv University,undefined
[7] The Weizmann Institute of Science,undefined
[8] Research and Development Laboratory,undefined
[9] The Genetic Institute,undefined
[10] Tel Aviv Sourasky Medical Center,undefined
来源
Oncogene | 2002年 / 21卷
关键词
ataxia-telangiectasia; ATM; MAP kinases; MAP kinase phosphatase; JNK; p38;
D O I
暂无
中图分类号
学科分类号
摘要
Cellular responses to DNA damage are mediated by an extensive network of signaling pathways. The ATM protein kinase is a master regulator of the response to double-strand breaks (DSBs), the most cytotoxic DNA lesion caused by ionizing radiation. ATM is the protein missing or inactive in patients with the pleiotropic genetic disorder ataxia-telangiectasia (A-T). A major response to DNA damage is altered expression of numerous genes. While studying gene expression in control and A-T cells following treatment with the radiomimetic chemical neocarzinostatin (NCS), we identified an expressed sequence tag that represented a gene that was induced by DSBs in an ATM-dependent manner. The corresponding cDNA encoded a dual specificity phosphatase of the MAP kinase phosphatase family, MKP-5. MKP-5 dephosphorylates and inactivates the stress-activated MAP kinases JNK and p38. The phosphorylation–dephosphorylation cycle of JNK and p38 by NCS was attenuated in A-T cells. Thus, ATM modulates this cycle in response to DSBs. These results further highlight ATM as a link between the DNA damage response and major signaling pathways involved in proliferative and apoptotic processes.
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页码:849 / 855
页数:6
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