Correlation between micrometer-scale ripple alignment and atomic-scale crystallographic orientation of monolayer graphene

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作者
Jin Sik Choi
Young Jun Chang
Sungjong Woo
Young-Woo Son
Yeonggu Park
Mi Jung Lee
Ik-Su Byun
Jin-Soo Kim
Choon-Gi Choi
Aaron Bostwick
Eli Rotenberg
Bae Ho Park
机构
[1] Konkuk University,Division of Quantum Phases and Devices, Department of Physics
[2] University of Seoul,Department of Physics
[3] Korea Institute for Advanced Study,undefined
[4] Creative Research Center for Graphene Electronics,undefined
[5] Electronics and Telecommunications Research Institute (ETRI),undefined
[6] Advanced Light Source (ALS),undefined
[7] E. O. Lawrence Berkeley National Laboratory,undefined
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Deformation normal to the surface is intrinsic in two-dimensional materials due to phononic thermal fluctuations at finite temperatures. Graphene's negative thermal expansion coefficient is generally explained by such an intrinsic property. Recently, friction measurements on graphene exfoliated on a silicon oxide surface revealed an anomalous anisotropy whose origin was believed to be the formation of ripple domains. Here, we uncover the atomistic origin of the observed friction domains using a cantilever torsion microscopy in conjunction with angle-resolved photoemission spectroscopy. We experimentally demonstrate that ripples on graphene are formed along the zigzag direction of the hexagonal lattice. The formation of zigzag directional ripple is consistent with our theoretical model that takes account of the atomic-scale bending stiffness of carbon-carbon bonds and the interaction of graphene with the substrate. The correlation between micrometer-scale ripple alignment and atomic-scale arrangement of exfoliated monolayer graphene is first discovered and suggests a practical tool for measuring lattice orientation of graphene.
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