Continuous-wave lasing of single-mode metamorphic quantum dot lasers for the 1.5-μm spectral region

被引：0
|
作者：
L. Ya. Karachinsky
T. Kettler
N. Yu. Gordeev
I. I. Novikov
M. V. Maximov
Yu. M. Shernyakov
N. V. Kryzhanovskaya
A. E. Zhukov
E. S. Semenova
A. P. Vasil’ev
V. M. Ustinov
N. N. Ledentsov
A. R. Kovsh
V. A. Shchukin
S. S. Mikhrin
A. Lochmann
O. Schulz
L. Reissmann
D. Bimberg
机构：
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
[2] Technische Universität,Institut für Festkörperphysik
[3] NL-Nanosemiconductor GmbH,undefined
来源：
Semiconductors | 2005年 / 39卷
关键词：
GaAs; Output Power; Electromagnetism; Quantum Efficiency; GaAs Substrate;
D O I：
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中图分类号：
学科分类号：
摘要：
Lasers based on InAs/InGaAs quantum dots grown on metamorphic (In,Ga,Al)As layers deposited by MBE on GaAs substrates exhibited emission near 1.5 μm with a differential quantum efficiency of about 50%. The narrow-stripe lasers operate in a single transverse mode and withstand continuous current density above 20 kA cm−2 without significant degradation. A maximum continuous-wave output power of 220 mW is obtained. Neither current nor beam filamentation was observed up to the highest pumping levels.
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页码：1415 / 1419
页数：4
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