Continuous-wave lasing of single-mode metamorphic quantum dot lasers for the 1.5-μm spectral region

被引：7
|
作者：
Karachinsky, LY [1 ]
Kettler, T
Gordeev, NY
Novikov, II
Maximov, MV
Shernyakov, YM
Kryzhanovskaya, NV
Zhukov, AE
Semenova, ES
Vasil'ev, AP
Ustinov, VM
Ledentsov, NN
Kovsh, AR
Shchukin, VA
Mikhrin, SS
Lochmann, A
Schulz, O
Reissmann, L
Bimberg, D
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 197021, Russia
[2] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
[3] NL Nanosemicond GmbH, D-44227 Dortmund, Germany
来源：
SEMICONDUCTORS | 2005年 / 39卷 / 12期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/1.2140316
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Lasers based on InAs/InGaAs quantum dots grown on metamorphic (In,Ga,Al)As layers deposited by MBE on GaAs substrates exhibited emission near 1.5 mu m with a differential quantum efficiency of about 50%. The narrow-stripe lasers operate in a single transverse mode and withstand continuous current density above 20 kA cm(-2) without significant degradation. A maximum continuous-wave output power of 220 mW is obtained. Neither current nor beam filamentation was observed up to the highest pumping levels. (c) 2005 Pleiades Publishing, Inc.
引用
收藏
页码：1415 / 1419
页数：5
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