Facile preparation of Cu3BiS3 nanorods film through a solution dip-coating process

被引：0
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作者：
Jiajia Li
Xiuxun Han
Yun Zhao
Jian Li
Min Wang
Chen Dong
Zhaomin Hao
机构：
[1] Chinese Academy of Sciences,Laboratory of Clean Energy Chemistry and Materials, Lanzhou Institute of Chemical Physics
[2] Chinese Academy of Sciences,State Key Laboratory of Solid Lubrication Lanzhou Institute of Chemical Physics
[3] University of Chinese Academy of Sciences,Henan Key Laboratory of Polyoxometalate Chemistry, College of Chemistry and Chemical Engineering
[4] Henan University,undefined
来源：
Journal of Materials Science: Materials in Electronics | 2017年 / 28卷
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摘要：
A novel Cu3BiS3 nanorods film was prepared by a facile dip-coating method and its compositional, structural and optoelectronic properties were systematically characterized. A possible reaction mechanism of Cu3BiS3 was also discussed briefly. Optical absorption investigation revealed that Cu3BiS3 nanorods film has a direct band gap of 1.46 eV. Photoelectrochemistry of hydrazine free unannealed film displays a strong p-type photoresponse, as high as ∼1.0 × 10−4 A/cm−2 at an applied potential of −0.5 V versus Ag/AgCl under the visible light irradiation. The photocurrent response measurement on the Cu3BiS3 nanorods film sheds light on the potential application as a low-cost, high-reproducibility and high-yield nanorods preparing approach towards efficient Cu3BiS3 photoelectricity and photovoltaic materials.
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页码：17772 / 17777
页数：5
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