Evaluation of moderately focused laser irradiation as a method for simulating single-event effects

被引：7
|
作者：
Chumakov A.I. [1 ]
Egorov A.N. [2 ]
Mavritsky O.B. [2 ]
Yanenko A.V. [1 ]
机构：
[1] Specialized Electronic Systems, Moscow, 115409
[2] Moscow Inst. of Engineering Physics, Moscow
来源：
Russian Microelectronics | 2004年 / 33卷 / 2期
关键词：
Energy Transfer; Laser Irradiation; Laser Spot; Spot Diameter; Linear Energy Transfer;
D O I：
10.1023/B:RUMI.0000018715.45935.79
中图分类号：
学科分类号：
摘要：
A numerical and a physical simulation are reported of single-event upsets and single-event latchups by laser irradiation with spot diameters ranging from 5 to 50 μm. It is shown that the method can be useful for estimating the threshold values of linear energy transfer if the laser spot covers a number of sensitive regions.
引用
收藏
页码：106 / 110
页数：4
相关论文
共 50 条
  • [31] Single-event effects in SOI technologies and devices
    Musseau, O
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1996, 43 (02) : 603 - 613
  • [32] Single-Event Effects in CMOS Image Sensors
    Lalucaa, Valerian
    Goiffon, Vincent
    Magnan, Pierre
    Rolland, Guy
    Petit, Sophie
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2013, 60 (04) : 2494 - 2502
  • [33] Application and evaluation of Chinese spallation neutron source in single-event effects testing
    Wang Xun
    Zhang Feng-Qi
    Chen Wei
    Guo Xiao-Qiang
    Ding Li-Li
    Luo Yin-Hong
    ACTA PHYSICA SINICA, 2019, 68 (05)
  • [34] Backside Laser Testing of Single-Event Effects in GaN-on-Si Power HEMTs
    Ngom, C.
    Pouget, V
    Zerarka, M.
    Coccetti, F.
    Touboul, A.
    Matmat, M.
    Crepel, O.
    Jonathas, S.
    Bascoul, G.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 68 (08) : 1642 - 1650
  • [35] SEREEL2-making laser single-event effects testing available to the many
    Sharp, Richard
    Gow, Jason
    2018 IEEE BRITISH AND IRISH CONFERENCE ON OPTICS AND PHOTONICS (BICOP), 2018, : 112 - 115
  • [36] A New Approach for Single-Event Effects Testing With Heavy Ion and Pulsed-Laser Irradiation: CMOS/SOI SRAM Substrate Removal
    Kanyogoro, Nderitu
    Buchner, Stephen
    McMorrow, Dale
    Hughes, Harold
    Liu, Michael S.
    Hurst, Al
    Carpasso, Charles
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2010, 57 (06) : 3414 - 3418
  • [37] Analysis of Single-Event Effects in a Radiation-Hardened Low-Jitter PLL Under Heavy Ion and Pulsed Laser Irradiation
    Chen, Zhuojun
    Lin, Min
    Ding, Ding
    Zheng, Yunlong
    Sang, Zehua
    Zou, Shichang
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2017, 64 (01) : 106 - 112
  • [38] Single-Event Characterization of a Stratix® 10 FPGA Using Neutron Irradiation
    Keller, Andrew M.
    Wirthlin, Michael J.
    2019 IEEE RADIATION EFFECTS DATA WORKSHOP (REDW), 2019, : 173 - 178
  • [39] Fundamentals of the pulsed laser technique for single-event upset testing
    Fouillat, Pascal
    Pouget, Vincent
    McMorrow, Dale
    Darracq, Frederic
    Buchner, Stephen
    Lewis, Dean
    RADIATION EFFECTS ON EMBEDDED SYSTEMS, 2007, : 121 - +
  • [40] Direct study of neutron induced single-event effects
    Dolezal, Z
    Broz, J
    Cechák, T
    Chren, D
    Horazd'ovsky, T
    Kluson, J
    Kodys, P
    Leroy, C
    Pospisil, S
    Sopko, B
    Tsvetkov, A
    Wilhelm, I
    PROCEEDINGS OF THE SEVENTH WORKSHOP ON ELECTRONICS FOR LHC EXPERIMENTS, 2001, 2001 (05): : 422 - 423
12345