High-Voltage AlInGaN LED Chips

被引：0

作者：

L. K. Markov

M. V. Kukushkin

A. S. Pavlyuchenko

I. P. Smirnova

G. V. Itkinson

O. V. Osipov

机构：

[1] Ioffe Institute,

[2] ZAO “IRSET-Center” Innovation Company,undefined

来源：

Semiconductors | 2019年 / 53卷

关键词：

light-emitting diode; LED chip; flip-chip design; high-voltage chip; gallium nitride;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：1529 / 1534

页数：5

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