Effect of magnetic Gd impurities on the electrical properties of PbTe single crystals

被引：1
|
作者：
Todosiciuc A. [1 ]
Nicorici A. [1 ]
Condrea E. [1 ,2 ]
Warchulska J. [2 ]
机构：
[1] Institute of Electronic Engineering and Nanotechnologies, Academy of Science of Moldova, Academiei 3/3
[2] International Laboratory of High Magnetic Fields and Low Temperatures, Gajowicka 95
来源：
Surface Engineering and Applied Electrochemistry | 2013年 / 49卷 / 4期
关键词：
lead telluride single crystals; magnetic susceptibility; narrow-gap semiconductors; rare earths;
D O I：
10.3103/S1068375513040145
中图分类号：
学科分类号：
摘要：
Under investigation are temperature dependences of electric conductivity, free carrier concentration and mobility in single-crystalline PbTe:Gd samples with varied impurity content. The features of electron transport in PbTe:Gd may be caused by a variable gadolinium valence. The striking result from the Seebeck coefficient measurements is that the thermoelectric power factor increases dramatically. Measurements of the magnetic susceptibility at low temperatures permit us to suggest that Gd ions may exist in different charge states. © 2013 Allerton Press, Inc.
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页码：312 / 315
页数：3
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