Oscillations of transverse magnetoresistance in the conduction band of quantum wells at different temperatures and magnetic fields

In this work, the influence of two-dimensional state density on oscillations of transverse electrical conductivity in heterostructures with rectangular quantum wells is investigated. A new analytical expression is derived for calculating the temperature dependence of the transverse electrical conductivity oscillation and the magnetoresistance of a quantum well. For the first time, a mechanism is developed for oscillating the transverse electrical conductivity and magnetoresistance of a quantum well from the first-order derivative of the magnetic field (differential) ∂ρ⊥2d(E,B,T,d)∂B\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\frac{{\partial \left( {\rho_{ \bot }^{2d} (E,B,T,d)} \right)}}{\partial B}$$\end{document} at low temperatures and weak magnetic fields. The oscillations of electrical conductivity and magnetoresistance of a narrow-band quantum well with a non-parabolic dispersion law are investigated. The proposed theory investigates the results of experiments of a narrow-band quantum well (InxGa1−xSb). The experiment shows that the oscillations of the transverse magnetoresistance of the InxGa1−xSb quantum filament, measured at a temperature of 2 K, transform into a continuous energy spectrum due to thermal washing under the influence of the temperature growth dynamics.