Influence of MnO clusters on resistance switching behaviors in ZnO/n-Si structures

被引：0
|
作者：
Vadim Sh. Yalishev
Yeon Soo Kim
Bae Ho Park
Shavkat U. Yuldashev
机构：
[1] Konkuk University,Division of Quantum Phases & Devices, School of Physics
[2] Dongguk University,Quantum
来源：
Journal of the Korean Physical Society | 2012年 / 60卷
关键词：
ZnO:Mn; Hysteretic behaviors of I–V curves; ZnO/Si heterojunction;
D O I：
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中图分类号：
学科分类号：
摘要：
Polycrystalline ZnO and ZnO:Mn (5%) films deposited on n-type Si substrates were investigated. The bias polarity dependence of the resistance change and its long retention in Mn-doped ZnO films was observed. The resistance switching could be explained by the trapping/extracting of charge carriers in the ZnO:Mn/n-Si interlayer containing MnO clusters. Under illumination, the ZnO:Mn/n-Si structure exhibited a decreased threshold voltage for switching from a high-resistance state to a low-resistance state.
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页码：1531 / 1534
页数：3
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