Dopant distribution in crystals of PbTe-based solid solutions

被引：0
|
作者：
S. G. Dorofeev
T. A. Kuznetsova
R. V. Sergeev
A. V. Tyurin
V. P. Zlomanov
O. I. Tananaeva
机构：
[1] Moscow State University,
来源：
Inorganic Materials | 2000年 / 36卷
关键词：
Diffusion Layer; PbTe; SnTe; Dopant Profile; Cold Zone;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The longitudinal dopant distributions in PbTe crystals are analyzed. The experimental indium profiles in Bridgman-grown PbTe〈In〉 crystals are well fitted by the Tiller equation. The Sn distribution in the PbTe〈Sn〉 crystals grown by the vapor-liquid-solid mechanism depends strongly on the rate-limiting process. If the growth rate is controlled by processes other than mass transport, the Sn distribution is more uniform
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页码：243 / 246
页数：3
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