Unusual memory effects in an incommensurate phase of the TlInS2 ferroelectric semiconductor

被引：0
|
作者：
M. -H. Yu. Seyidov
R. A. Suleymanov
F. Salehli
S. S. Babayev
T. G. Mammadov
A. I. Nadjafov
G. M. Sharifov
机构：
[1] Gebze Institute of Technology,Department of Physics
[2] Istanbul Technical University,Institute of Physics
[3] National Academy of Sciences of Azerbaijan,undefined
来源：
Physics of the Solid State | 2009年 / 51卷
关键词：
61.72.S-; 61.44.Fw; 64.70.Rh; 66.30.Lw; 77.80.Bh;
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学科分类号：
摘要：
The experimental data on memory effects in an incommensurate phase are analyzed both in undoped layered TlInS2 crystals selected from different technological batches and in TlInS2: La. Various types of unusual memory effect are detected. It is shown that the observed memory effects are due to pinning of the soliton superstructure by a defect density wave in the internal field of the electret state.
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页码：568 / 576
页数：8
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