A semi-infinite anti-plane crack in a piezoelectric semiconductor

被引：0

作者：

Jiashi Yang

机构：

[1] University of Nebraska,Department of Engineering Mechanics

来源：

International Journal of Fracture | 2004年 / 130卷

关键词：

Mechanical Engineer; Civil Engineer; Piezoelectric Semiconductor; Electromechanical Field;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Electromechanical fields around an anti-plane, semi-infinite crack in piezoelectric semiconductors of 6mm symmetry are obtained. The effects of semiconduction on fields near the crack tip are examined.

引用

页码：L169 / L174

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