Modeling the Deflection of Polarized Electrons with Energies in the Range 3.35–14 GeV in a Bent Silicon Crystal

被引：0
|
作者：
V. P. Koshcheev
Yu. N. Shtanov
D. A. Morgun
T. A. Panina
机构：
[1] “Strela” Branch of the Moscow Aviation Institute (National Research University),
[2] Surgut Branch of Tyumen Industrial University,undefined
[3] Surgut State University,undefined
[4] Scientific-Research Institute for System Analysis of the Russian Academy of Sciences (Federal State Institution),undefined
来源：
Russian Physics Journal | 2018年 / 60卷
关键词：
Bargmann–Michel–Telegdi equation; depolarization of an electron beam; channeling;
D O I：
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学科分类号：
摘要：
The evolution of the magnetic moment of a relativistic particle is described with the help of the Bargmann–Michel–Telegdi equation in the planar channels of a bent silicon crystal with allowance for multiple scatteringboth along and transverse to the (111) atomic plane, which consists of <110> chains. Results of numerical simulations demonstrate a strong dependence of the degree of depolarization of the electron beam on the energy since at the energies 3.35 and 4.2 GeV the maximum in the distribution over rotation angles of the electron spin is absent, and at energies from 6.3 to 14 GeV the position of the maximum is in line with the theoretical estimate obtained using the formula of V. L. Lyuboshits.
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页码：2087 / 2094
页数：7
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