Energy Levels of Structural Defects in ZnAs2

被引：0
|
作者：
V. A. Morozova
S. F. Marenkin
O. G. Koshelev
机构：
[1] Moscow State University,
[2] Kurnakov Institute of General and Inorganic Chemistry,undefined
[3] Russian Academy of Sciences,undefined
来源：
Inorganic Materials | 2002年 / 38卷
关键词：
Inorganic Chemistry; Energy Level; Structural Defect; Ionization Energy; Acceptor Level;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Impurity photoconductivity and temperature-dependent Hall effect measurements were used to assess the ionization energies of acceptor levels produced in undoped and Te-doped ZnAs2 single crystals by structural defects: εa(1-4) = 0.08, 0.14, 0.26, and 0.34 eV. The nature of the structural defects responsible for these acceptor levels is discussed.
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页码：325 / 330
页数：5
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