Magnetic-field sensors based on anisotropic magnetoresistive thin-film structures for operation in a wide temperature range

被引:0
|
作者
N. A. Djuzhev
N. S. Mazurkin
V. S. Pozdnyakov
A. S. Iurov
M. Yu. Chinenkov
机构
[1] National Research University of Electronic Technology “MIET”,
[2] JSC “Avtoelektronika”,undefined
[3] “SPINTEK” LLC,undefined
来源
Semiconductors | 2015年 / 49卷
关键词
anisotropic magnetoresistance (AMR) effect; magnetic-field sensor; magnetic films; angularposition sensor; rotation-angle sensor; phase sensor;
D O I
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中图分类号
学科分类号
摘要
The results of studies on the fabrication and optimization of the configuration of magnetic-field sensors based on anisotropic magnetoresistive thin-film structures are described. Magnetic-field sensors with an odd characteristic and a sensitivity to 23.7 (mV/V)/(kA/m) and a 180° angle-rotation sensor with a signal amplitude of 15 mV/V are obtained. Based on the performed thermal tests, the possibility of applying the developed sensors in extreme environments in the temperature range from –60 to +150°C is shown, and the temperature-sensitivity coefficient amounts to –0.35%/°C. The obtained sensors are tested in angle, speed, and phase sensors in the automobile industry. The characteristics of the developed sensors correspond to the analogues of leading world firms.
引用
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页码:1739 / 1742
页数:3
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