Tailoring of optoelectronic properties of InAs/GaAs quantum dot nanosystems by strain control

Full three-dimensional numerical analysis based on continuum elasticity and model solid theory has been carried out to evaluate some possible means of tailoring the optoelectronic properties of InAs/GaAs quantum dot (QD) nanosystems. Numerical results predicted that while the stacking period control leads to the shifts in valence band edges, incorporation of InxGa1−x As ternary strain relief layer (SRL) causes composition-dependent shifts in conduction band edges. On the other hand, modification of the SRL shape itself did not yield significant changes in the confinement potentials. It is therefore suggested that strain control by incorporation of ternary intermediate layers combined with geometry controls, would allow greater flexibility in the tailoring of the opto-electronic characteristics of QD-based systems.