Epitaxial growth of iridate pyrochlore Nd2Ir2O7 films

被引：0

作者：

J. C. Gallagher

B. D. Esser

R. Morrow

S. R. Dunsiger

R. E. A. Williams

P. M. Woodward

D. W. McComb

F. Y. Yang

机构：

[1] The Ohio State University,Department of Physics

[2] Center for Electron Microscopy and Analysis,Department of Materials Science and Engineering

[3] The Ohio State University,Department of Chemistry

[4] The Ohio State University,undefined

[5] Center for Emergent Materials,undefined

[6] The Ohio State University,undefined

来源：

Scientific Reports | / 6卷

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摘要：

Epitaxial films of the pyrochlore Nd2Ir2O7 have been grown on (111)-oriented yttria-stabilized zirconia (YSZ) substrates by off-axis sputtering followed by post-growth annealing. X-ray diffraction (XRD) results demonstrate phase-pure epitaxial growth of the pyrochlore films on YSZ. Scanning transmission electron microscopy (STEM) investigation of an Nd2Ir2O7 film with a short post-annealing provides insight into the mechanism for crystallization of Nd2Ir2O7 during the post-annealing process. STEM images reveal clear pyrochlore ordering of Nd and Ir in the films. The epitaxial relationship between the YSZ and Nd2Ir2O7 is observed clearly while some interfacial regions show a thin region with polycrystalline Ir nanocrystals.

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