Microwave Photoresistance of a Two-Dimensional Topological Insulator in a HgTe Quantum Well

被引：0
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作者：
A. S. Yaroshevich
Z. D. Kvon
G. M. Gusev
N. N. Mikhailov
机构：
[1] Russian Academy of Sciences,Rzhanov Institute of Semiconductor Physics, Siberian Branch
[2] Novosibirsk State University,undefined
[3] Instituto de Fisica da Universidade de São Paulo,undefined
来源：
JETP Letters | 2020年 / 111卷
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摘要：
The microwave photoresistance of a two-dimensional topological insulator in a HgTe quantum well with an inverted spectrum has been experimentally studied under irradiation at frequencies of 110–169 GHz. Two mechanisms of formation of this photoresistance have been revealed. The first mechanism is due to transitions between the dispersion branches of edge current states, whereas the second mechanism is caused by the action of radiation on the bulk of the quantum well.
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页码：121 / 125
页数：4
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