The impact of Ir doping on the electrical properties of YbFe1−xIrxO3 perovskite-oxide compounds

被引：0

作者：

M. Coskun

O. Polat

F. M. Coskun

B. Zengin Kurt

Z. Durmus

M. Caglar

A. Turut

机构：

[1] Istanbul Medeniyet University,Faculty of Engineering and Natural Sciences, Department of Engineering Physics

[2] CEITEC BUT,Institute of Physical Engineering

[3] Brno University of Technology,Faculty of Pharmacy, Department of Pharmaceutical Chemistry

[4] Brno University of Technology,Faculty of Science, Department of Physics

[5] Bezmialem Vakif University,undefined

[6] Eskisehir Technical University,undefined

来源：

Journal of Materials Science: Materials in Electronics | 2020年 / 31卷

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摘要：

In this study, YbFe1−xIrxO3 (x = 0, 0.01, 0.10) compounds were synthesized by solid-state reaction method. Chemical and structural analyses of studied compounds were carried out by XPS, SEM and EDX methods. SEM and STEM studies have shown that the particle size shrinks as doping ratio increases. Electrical/dielectric properties of the synthesized compounds were performed in wide-range frequency (1–107 Hz) and temperature (between − 100 and 100 °C with 20 °C steps) using Novocontrol Dielectric/Impedance Spectrometer. Frequency-dependent loss tangent plots exhibited that three dielectric relaxations take place for undoped YbFeO3 (YbFO) compound, whereas two dielectric relaxations were observed for 1 and 10 mol% Ir-doped YbFO compounds. Resistivity measurement revealed that the 1 mol% Ir-substituted YbFO has lower resistivity than undoped.

引用

页码：1731 / 1744

页数：13