Thermoelectric Properties of Te-doped In0.9Si0.1Se with Enhanced Effective Mass

被引：0
|
作者：
Ji Hoon Jeon
Dong Ho Kim
Seokown Hong
Weon Ho Shin
Nguyen Van Du
Hyun-Sik Kim
TaeWan Kim
Sang-il Kim
机构：
[1] University of Seoul,Department of Materials Science and Engineering
[2] Kwangwoon University,Department of Electronic Materials Engineering
[3] Phenikaa University,Faculty of Materials Science and Engineering
[4] Hongik University,Department of Materials Science and Engineering
[5] Jeonbuk National University,Department of Electrical Engineering and Smart Grid Research Center
来源：
Electronic Materials Letters | 2021年 / 17卷
关键词：
Thermoelectric; Post-transition-metal chalcogenides; Doping; Carrier concentration; Mobility;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：340 / 346
页数：6
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