Temperature dependent hopping conduction in lithium-doped zinc oxide in the range 10–300 K

被引:0
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作者
S. Majumdar
P. Banerji
机构
[1] Indian Institute of Technology,Materials Science Centre
来源
Applied Physics A | 2010年 / 100卷
关键词
Pulse Laser Deposition; Oxygen Ambience; Interstitial Site; Quartz Substrate; Dope Zinc Oxide;
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摘要
A temperature-dependent hopping conduction was studied in lithium (Li)-doped zinc oxide (ZnO) in the temperature range 10–300 K. Monodoping of Li in ZnO was made as suggested by the theory based on the first principle calculations. Li-doped ZnO films were deposited both on glass and quartz substrates by pulsed laser deposition (PLD) in presence and absence of oxygen ambience. The films were found to be p-type. It was found that whereas in the temperature range 10–40 K, variable range hopping resulted in Mott’s conductivity, above 40 K, the conductivity was governed by the thermal assisted hopping.
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页码:487 / 491
页数:4
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