Electromigration behavior of Cu/Sn–58Bi–1Ag/Cu solder joints by ultrasonic soldering process

被引:0
|
作者
Shengfa Liu
Zhangyang Liu
Li Liu
Tianjie Song
Wei Liu
Yingzhen Tan
Zhanyi San
Shangyu Huang
机构
[1] Wuhan University of Technology,School of Materials Science and Engineering
关键词
D O I
暂无
中图分类号
学科分类号
摘要
Sn–58Bi–1Ag solder ribbon was prepared by twin-roll rapid solidification technology, and the ultrasonic soldering process was used to prepare Cu/Sn–58Bi–1Ag/Cu linear solder joints. Electron probe microanalysis (EPMA) and energy dispersive X-ray spectroscopy (EDS) were used to study the interface morphology of intermetallic compounds (IMC), Bi segregation, and solder joint matrix microstructure evolution with the current density of 1 × 104A/cm2 (25 °C). The result shows that the morphology of the anode IMC layer changes from scallop-like to hilly-like and then to flat-plate-like with the electrification time, and the thickness of IMC layer increases gradually. Bi is segregated toward the anode to form a Bi-rich layer. The cathode IMC layer is changed from a scallop to a zigzag, and its thickness is firstly increased and then decreased. The Sn is segregated toward the cathode to finally form a β-Sn-rich layer. Coarsening of eutectic microstructure (β-Sn+Bi) in solder joint matrix was caused by prolonged time. Based on linear fitting, the kinetic index n of the IMC layer of the anode and cathode is 0.432 and 0.491, respectively, and the growth mechanism is supposed to be volume diffusion. Ultrasonic soldering techniques can refine the Bi phase and increase the solubility of Bi in β-Sn, which slows down the formation of Bi-rich layers. The addition of Ag forms wedge-shaped and granular Ag3Sn intermetallic compounds, which hinders the growth of the Bi-rich layer and the Cu6Sn5 IMC, thus effectively inhibiting the electromigration process.
引用
收藏
页码:11997 / 12003
页数:6
相关论文
共 50 条
  • [21] A comparative study of laser soldering and reflow soldering using Sn-58Bi solder/Cu joints
    Jeong, Min-Seong
    Heo, Min-Haeng
    Kim, Jungsoo
    Yoon, Jeong-Won
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2023, 34 (28)
  • [22] Electromigration behaviors in Sn–58Bi solder joints under different current densities and temperatures
    Fengjiang Wang
    Luting Liu
    Dongyang Li
    Mingfang Wu
    Journal of Materials Science: Materials in Electronics, 2018, 29 : 21157 - 21169
  • [23] Electromigration-induced Bi-rich whisker growth in Cu/Sn-58Bi/Cu solder joints
    He, Hongwen
    Xu, Guangchen
    Guo, Fu
    JOURNAL OF MATERIALS SCIENCE, 2010, 45 (02) : 334 - 340
  • [24] Electromigration behavior of Sn3.0Ag0.5Cu/Sn58Bi structural composite solder interconnect
    Wang, Fengjiang
    Zhou, Lili
    Wang, Xiaojing
    2016 17TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT), 2016, : 268 - 272
  • [25] Electromigration-enhanced intermetallic growth and phase evolution in Cu/Sn-58Bi/Cu solder joints
    He, Hongwen
    Xu, Guangchen
    Guo, Fu
    JOURNAL OF MATERIALS SCIENCE, 2010, 45 (04) : 929 - 935
  • [26] Electromigration behavior of Cu/Sn3.0Ag0.5Cu/Cu ball grid array solder joints
    Yiming Jiang
    Hailong Li
    Gang Chen
    Yunhui Mei
    Meiyu Wang
    Journal of Materials Science: Materials in Electronics, 2019, 30 : 6224 - 6233
  • [27] Electromigration behavior of Cu/Sn3.0Ag0.5Cu/Cu ball grid array solder joints
    Jiang, Yiming
    Li, Hailong
    Chen, Gang
    Mei, Yunhui
    Wang, Meiyu
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2019, 30 (06) : 6224 - 6233
  • [28] Tensile properties of Cu/Sn–58Bi/Cu soldered joints subjected to isothermal aging
    Xiao Yu
    Xiaowu Hu
    Yulong Li
    Teng Liu
    Ruhua Zhang
    Zhixian Min
    Journal of Materials Science: Materials in Electronics, 2014, 25 : 2416 - 2425
  • [29] Electromigration in line-type Cu/Sn-Bi/Cu solder joints
    Gu, X.
    Chan, Y. C.
    JOURNAL OF ELECTRONIC MATERIALS, 2008, 37 (11) : 1721 - 1726
  • [30] Electromigration in Line-Type Cu/Sn-Bi/Cu Solder Joints
    X. Gu
    Y.C. Chan
    Journal of Electronic Materials, 2008, 37 : 1721 - 1726