A method for modulation of the charge-carrier mobility in a semiconductor

被引：0
|
作者：
V. V. Novikov
R. R. Vardanyan
É. E. Pakhomov
机构：
[1] ZAO Avangard-Élektronika,
来源：
Semiconductors | 2000年 / 34卷
关键词：
Silicon; Charge Carrier; Magnetic Material; Electromagnetism; Minority Charge Carrier;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A new method for modulating the mobility of the majority and minority charge carriers in silicon was studied. It is shown that, under the effect of local avalanche breakdown of a p-n junction, the charge-carrier mobility in the bulk of the semiconductor increases or decreases, depending on the orientation of the p-n junction subjected to breakdown in relation to the direction of motion of the charge carriers.
引用
收藏
页码：606 / 608
页数：2
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