Ar Ion Irradiation Effects on the Characteristics of Ru|Pt|n-GaN Schottky Barrier Diodes

被引：0
|
作者：
S. Kumar
V. Kumar Mariswamy
A. Kumar
A. Kandasami
A. Nimmala
S. V. S. Nageswara Rao
V. Rajagopal Reddy
K. Sannathammegowda
机构：
[1] Department of Studies in Physics,
[2] Manasagangotri,undefined
[3] University of Mysore,undefined
[4] Department of Physics,undefined
[5] K L E Society’s R L S Institute,undefined
[6] Inter-University Accelerator Centre (IUAC),undefined
[7] Centre for Advanced Studies in Electronics Science and Technology (CASEST),undefined
[8] School of Physics,undefined
[9] University of Hyderabad,undefined
[10] School of Physics,undefined
[11] University of Hyderabad,undefined
[12] Department of Physics,undefined
[13] Sri Venkateswara University Tirupati,undefined
来源：
Semiconductors | 2020年 / 54卷
关键词：
GaN SBDs; electrical parameters; ion irradiation; current conduction mechanisms;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：1641 / 1649
页数：8
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