High-Q Fano Resonances in Asymmetric and Symmetric All-Dielectric Metasurfaces

We present high-quality (high-Q) Fano resonances in all-dielectric metasurfaces consisting of a periodic array of air holes on silicon (Si) film, deposited on the top of quartz substrate. With the control of the radius difference Δr and center distance Δd between the air holes, two asymmetric all-dielectric metasurfaces are proposed to achieve extremely high-Q Fano resonances. Numerical method with finite difference time domain and equivalent circuit model is employed to analyse the excitation mechanism of the sharp Fano resonances. It is shown that the high-Q Fano resonances come from the interference of two Fabry-Perot resonances, resulting in an extremely narrow window. Moreover, we also demonstrate that the high-Q Fano resonances can also be realized as electromagnetic wave is obliquely incident on the symmetric all-dielectric metasurface. Finally, we show the high-Q Fano resonances caused by asymmetric configurations can coexist with the Fano resonances in the symmetric configuration induced by oblique incidence. As a result, a tri-band Fano resonance is obtained. It is expected that our results will provide important mechanisms for tuning and switching a wide variety of optical devices such as angular sensors, filters, switches, and modulators.