Improved charge injection of pentacene transistors by immobilizing DNA on gold source-drain electrodes

被引:0
|
作者
Haiyang Gui
Bin Wei
Jianhua Zhang
Jun Wang
机构
[1] Shanghai University,School of Materials Science and Engineering
[2] Shanghai University,Key Lab of Advanced Display and System Application, Ministry of Education
来源
Applied Physics A | 2014年 / 115卷
关键词
Threshold Voltage; Gold Electrode; Organic Semiconductor; Pentacene; Charge Injection;
D O I
暂无
中图分类号
学科分类号
摘要
We successfully optimized the charge injection of pentacene-based organic thin-film transistors with bottom contact by immobilizing deoxyribonucleic acid (DNA) on gold electrodes. The single-stranded DNA having mercapto group (-SH) was used as the modified layer by molecular self-assembly onto the surface of gold electrodes. The threshold voltage is −10 V, and the field-effect mobility reaches 0.34 cm2/V s, which is comparable with that of typical top-contact devices. Mechanism of performance improvement is due to the high carrier density in contact region attracted by the phosphate group on the DNA backbone increasing the tunneling probability for improved charge injection. Furthermore, the introduction of modified layer significantly enhanced the grain size of pentacene that is beneficial for charge transport, which also is responsible for the improved device performances.
引用
收藏
页码:759 / 763
页数:4
相关论文
共 50 条
  • [41] High-performance organic field-effect transistors based on copper/copper sulphide bilayer source-drain electrodes
    Gu, Wen
    Jin, Weipeng
    Wei, Bin
    Zhang, Jianhua
    Wang, Jun
    APPLIED PHYSICS LETTERS, 2010, 97 (24)
  • [42] Enhanced performance of isotype planar heterojunction photoresponsive organic field-effect transistors by using Ag source-drain electrodes
    Li, Yao
    Lv, Wenli
    Luo, Xiao
    Sun, Lei
    Zhou, Maoqing
    Zhang, Jianping
    Zhao, Feiyu
    Zhong, Junkang
    Peng, Yingquan
    EPL, 2015, 110 (01)
  • [43] Tunable organic transistors that use microfluidic source and drain electrodes
    Maltezos, G
    Nortrup, R
    Jeon, S
    Zaumseil, J
    Rogers, JA
    APPLIED PHYSICS LETTERS, 2003, 83 (10) : 2067 - 2069
  • [44] Effect of source-drain contact and channel length on the performance of vertical thin-film transistors
    Yin, Xue-Mei
    Lin, De-Lang
    Yan, Yu-Pei
    Li, Yi
    Ma, Wei-Min
    AIP ADVANCES, 2023, 13 (10)
  • [45] Quantum scattering and its impact on the source-drain current with defect generation in the channel of nanoscale transistors
    Mao, L-F
    INDIAN JOURNAL OF PHYSICS, 2020, 94 (05) : 583 - 592
  • [46] Comparative study of source-drain contact metals for amorphous InGaZnO thin-film transistors
    Nag, Manoj
    Bhoolokam, Ajay
    Steudel, Soeren
    Chasin, Adrian
    Groeseneken, Guido
    Heremans, Paul
    JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY, 2014, 22 (06) : 310 - 315
  • [47] The annealing effect on properties of ZnO thin film transistors with Ti/Pt source-drain contact
    Jin-Seong Park
    Journal of Electroceramics, 2010, 25 : 145 - 149
  • [49] Source-Drain Engineering for Sub-90 nm Junction-Field-Effect Transistors
    Saha, Samar K.
    2009 2ND INTERNATIONAL WORKSHOP ON ELECTRON DEVICES AND SEMICONDUCTOR TECHNOLOGY, 2009, : 49 - 54
  • [50] Highly improved charge injection in pentacene-based organic transistors by chemically doping with copper iodide interlayer
    Chen, Xiong
    Wei, Xicheng
    Zhang, Hao
    Wang, Jun
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2017, 214 (08):